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标题:Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs.
时间:2019-01-11 23:08:29
DOI:10.1364/oe.19.012569
PMID:21716498
作者:Zhang Y;Ning Y;Zhang L;Zhang J;Zhang J
出版源: 《Optics Express》 ,2011 ,19 (13) :12569-81
摘要:Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs.metamaterialssub-diffraction limitnanophotonicsapertureswave propagationtransmission and absorptionVertical-cavity surface-emitting lasers emitting at 808 nm with unstrained GaAs/Al0.3Ga0.7As, tensilely strained GaAs(x)P(1-x)/Al0.3Ga0.7As and compressively strained In(1-x-...
大小:1762 kb
页数:14 PAGES
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